Author Affiliations
Abstract
The nonlinear photoresponse to a 1.56-\mu m infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.
250.4390 Nonlinear optics, integrated optics 250.0040 Detectors 190.4400 Nonlinear optics, materials 190.4350 Nonlinear optics at surfaces Chinese Optics Letters
2013, 11(11): 112501